Spin-orbit Scattering and the Kondo Effect

The effects of spin-orbit scattering of conduction electrons in the Kondo regime are investigated theoretically. It is shown that due to time-reversal symmetry, spin-orbit scattering does not suppress the Kondo effect, even though it breaks spin-rotational symmetry, in full agreement with experiment. An orbital magnetic field, which breaks time-reversal symmetry, leads to an effective Zeeman splitting, which can be probed in transport measurements. It is shown that, similar to weak-localization, this effect has anomalous magnetic field and temperature dependence.Comment: 10 pages, RevTex, one postscript figure available on request from [email protected]

Orbital Magnetism and Current Distribution of Two-Dimensional Electrons under Confining Potential

The spatial distribution of electric current under magnetic field and the resultant orbital magnetism have been studied for two-dimensional electrons under a harmonic confining potential V(\vecvar{r})=m \omega_0^2 r^2/2 in various regimes of temperature and magnetic field, and the microscopic conditions for the validity of Landau diamagnetism are clarified. Under a weak magnetic field (\omega_c\lsim\omega_0, \omega_c being a cyclotron frequency) and at low temperature (T\lsim\hbar\omega_0), where the orbital magnetic moment fluctuates as a function of the field, the currents are irregularly distributed paramagnetically or diamagnetically inside the bulk region. As the temperature is raised under such a weak field, however, the currents in the bulk region are immediately reduced and finally there only remains the diamagnetic current flowing along the edge. At the same time, the usual Landau diamagnetism results for the total magnetic moment. The origin of this dramatic temperature dependence is seen to be in the multiple reflection of electron waves by the boundary confining potential, which becomes important once the coherence length of electrons gets longer than the system length. Under a stronger field (\omega_c\gsim\omega_0), on the other hand, the currents in the bulk region cause de Haas-van Alphen effect at low temperature as T\lsim\hbar\omega_c. As the temperature gets higher (T\gsim\hbar\omega_c) under such a strong field, the bulk currents are reduced and the Landau diamagnetism by the edge current is recovered.Comment: 15 pages, 11 figure

Time Dependent Current Oscillations Through a Quantum Dot

Time dependent phenomena associated to charge transport along a quantum dot in the charge quantization regime is studied. Superimposed to the Coulomb blockade behaviour the current has novel non-linear properties. Together with static multistabilities in the negative resistance region of the I-V characteristic curve, strong correlations at the dot give rise to self-sustained current and charge oscillations. Their properties depend upon the parameters of the quantum dot and the external applied voltages.Comment: 4 pages, 3 figures; to appear in PR

Kondo resonances and Fano antiresonances in transport through quantum dots

The transmission of electrons through a non-interacting tight-binding chain with an interacting side quantum dot (QD) is analized. When the Kondo effect develops at the dot the conductance presents a wide minimum, reaching zero at the unitary limit. This result is compared to the opposite behaviour found in an embedded QD. Application of a magnetic field destroys the Kondo effect and the conductance shows pairs of dips separated by the charging energy U. The results are discussed in terms of Fano antiresonances and explain qualitatively recent experimental results.Comment: 4 pages including 4 figure

Suppression of current in transport through parallel double quantum dots

We report our study of the I-V curves in the transport through the quantum dot when an additional quantum dot lying in the Kondo regime is side-connected to it. Due to the Kondo scattering off the effective spin on a side-connected quantum dot the conductance is suppressed at low temperatures and at low source-drain bias voltages. This zero-bias anomaly is understood as enhanced Kondo scattering with decreasing temperature.Comment: 14 pages, 8 figure

Spin-Orbit-Induced Magnetic Anisotropy for Impurities in Metallic Samples I. Surface Anisotropy

Motivated by the recent measurements of Kondo resistivity in thin films and wires, where the Kondo amplitude is suppressed for thinner samples, the surface anisotropy for magnetic impurities is studied. That anisotropy is developed in those cases where in addition to the exchange interaction with the impurity there is strong spin-orbit interaction for conduction electrons around the impurity in the ballistic region. The asymmetry in the neighborhood of the magnetic impurity exhibits the anisotropy axis $n$ which, in the case of a plane surface, is perpendicular to the surface. The anisotropy energy is $\Delta E=K_d (nS)^2$ for spin $S$, and the anisotropy constant $K_d$ is inversionally proportional to distance $d$ measured from the surface and $K_d>0$. Thus at low temperature the spin is frozen in a singlet or doublet of lowest energy. The influence of that anisotropy on the electrical resistivity is the subject of the following paper (part II).Comment: 28 pages, RevTeX (using epsfig), 8 eps figures included, submitted to PR

Fano effect of a strongly interacting quantum dot in contact with superconductor

The physics of a system consisting of an Aharonov Bohm (AB) interferometer containing a single level interacting quantum dot (QD) on one of its arms, and attached to normal (N) and superconducting (S) leads is studied and elucidated. Here the focus is directed mainly on N-AB-S junctions but the theory is capable of studying S-AB-S junctions as well. The interesting physics comes into play under the conditions that both the Kondo effect in the QD and the the Fano effect are equally important.It is found the conductance of the junction is suppressed as the Fano effect becomes more dominant.Comment: 4 pages, Talk to be given at the NATO Conference MQO, Bled, Slovenia 7-10 September 200

A gentle introduction to the functional renormalization group: the Kondo effect in quantum dots

The functional renormalization group provides an efficient description of the interplay and competition of correlations on different energy scales in interacting Fermi systems. An exact hierarchy of flow equations yields the gradual evolution from a microscopic model Hamiltonian to the effective action as a function of a continuously decreasing energy cutoff. Practical implementations rely on suitable truncations of the hierarchy, which capture nonuniversal properties at higher energy scales in addition to the universal low-energy asymptotics. As a specific example we study transport properties through a single-level quantum dot coupled to Fermi liquid leads. In particular, we focus on the temperature T=0 gate voltage dependence of the linear conductance. A comparison with exact results shows that the functional renormalization group approach captures the broad resonance plateau as well as the emergence of the Kondo scale. It can be easily extended to more complex setups of quantum dots.Comment: contribution to Les Houches proceedings 2006, Springer styl

Percolation-type description of the metal-insulator transition in two dimensions

A simple non-interacting-electron model, combining local quantum tunneling and global classical percolation (due to a finite dephasing time at low temperatures), is introduced to describe a metal-insulator transition in two dimensions. It is shown that many features of the experiments, such as the exponential dependence of the resistance on temperature on the metallic side, the linear dependence of the exponent on density, the $e^2/h$ scale of the critical resistance, the quenching of the metallic phase by a parallel magnetic field and the non-monotonic dependence of the critical density on a perpendicular magnetic field, can be naturally explained by the model.Comment: 4 pages, 4 figure

Flicker Noise Induced by Dynamic Impurities in a Quantum Point Contact

We calculate low-frequency noise (LFN) in a quantum point contact (QPC) which is electrostatically defined in a 2D electron gas of a GaAs-AlGaAs heterostructure. The conventional source of LFN in such systems are scattering potentials fluctuating in time acting upon injected electrons. One can discriminate between potentials of different origin -- noise may be caused by the externally applied gate- and source-drain voltages, the motion of defects with internal degrees of freedom close to the channel, electrons hopping between localized states in the doped region, etc. In the present study we propose a model of LFN based upon the assumption that there are many dynamic defects in the surrounding of a QPC. A general expression for the time-dependent current-current correlation function is derived and applied to a QPC with quantized conductance. It is shown that the level of LFN is significantly different at and between the steps in a plot of the conductance vs. gate voltage. On the plateaus, the level of noise is found to be low and strongly model-dependent. At the steps, LFN is much larger and only weakly model-dependent. As long as the system is biased to be at a fixed position relative the conductance step,Comment: 26 revtex APR 94-4